| 摘要 |
A method for passivating at least a part of a surface of a semiconductor substrate, wherein at least one layer comprising at least one SiOx layer is realized on said part of the substrate surface by: -placing the substrate (1) in a process chamber (5); -maintaining the pressure in the process chamber (5) at a relatively low value; -maintaining the substrate (1) at a specific substrate treatment temperature; -generating a plasma (P) by means of at least one plasma source (3) mounted on the process chamber (5) at a specific distance (L) from the substrate surface; -contacting at least a part of the plasma (P) generated by each source (3) with the said part of the substrate surface; and -supplying at least one precursor suitable for SiOx realization to the said part of the plasma (P); wherein at least the at least one layer realized on the substrate (1) in subjected to a temperature treatment in a gas environment.
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