| 摘要 |
PROBLEM TO BE SOLVED: To provide a multilayer silicon semiconductor wafer capable of having gettering capability in a multilayer silicon semiconductor wafer where thin-layer silicon semiconductor wafers are laminated, and to provide a manufacturing method of the multilayer silicon semiconductor wafer. SOLUTION: The multilayer silicon semiconductor wafer is manufactured by polishing the backside of a silicon semiconductor wafer of which devices have already been formed for thinning, forming a damage layer on the polishing surface on the backside of the thinned silicon semiconductor wafer for manufacturing individual silicon semiconductor wafers, and laminating a plurality of individual silicon semiconductor wafers where the plurality of devices have already been formed and the damage layer is formed on the backside. In the multilayer silicon semiconductor wafer, each laminated layer has each individual device and damage layer, and even a multilayer structure of a thin layer has gettering capability. COPYRIGHT: (C)2010,JPO&INPIT
|
