| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor optical element in which current-light output characteristics can be changed. SOLUTION: The semiconductor optical element 1a includes a first conductivity type semiconductor region 3, an active layer 5, a potential control layer 2a, and a second conductivity type semiconductor region 7. The first conductivity type semiconductor region 3 is provided on a GaAs semiconductor substrate 11 of the first conductivity type. The second conductivity type semiconductor region 7 is provided on the first conductivity type semiconductor region 3. The active layer 5 is provided between the first conductivity type semiconductor region 3 and the second conductivity type semiconductor region 7. The potential control layer 2a is provided between a second region 3d of the first conductivity type semiconductor region 3 and the second conductivity type semiconductor region 7 and has a band gap energy which is smaller than that of the first and second conductivity type semiconductor regions 3 and 7 and larger than that of the active layer 5. The first conductivity type semiconductor region 3 and the second conductivity type semiconductor region 7 indirectly constitute a pn junction with the potential control layer 2a being interposed therebetween, around the active layer 5. COPYRIGHT: (C)2008,JPO&INPIT
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