FERROELECTRIC FILM, SEMICONDUCTOR DEVICE HAVING FERROELECTRIC FILM, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a ferroelectric film enabling more miniaturization and more stable operation than the film in the prior art, and having excellent adhesiveness with a base, to provide a semiconductor device using the ferroelectric film and a method of manufacturing the semiconductor device, and to provide a ferroelectric device using the ferroelectric film. SOLUTION: The semiconductor device 71 has a substrate 55, an insulator 56, an yttrium oxide film 66, a ferroelectric film (STN film) 57 and an upper electrode 62. The yttrium oxide film 66 is used as a base in crystallizing the ferroelectric film (STN film) 57. The yttrium oxide film 66 contains oxygen, and its lattice information is approximate to the crystal of the ferroelectric film (STN film) 57. Accordingly, when the STN is crystallized on the yttrium oxide film 66, the ferroelectric film (STN film) 57 having no oxygen loss and≥200 kV/cm anti-electric field can be obtained. COPYRIGHT: (C)2010,JPO&INPIT