| 摘要 |
A composite semiconductor package is disclosed. The package includes a lead frame having first and second die bonding pads, the first and second die bonding pads having a large lateral separation therebetween, a first device bonded to the first die bonding pad, a second device bonded to the second die bonding pad, a plurality of first leads coupled to the first die bonding pad, a plurality of second leads coupled to the second die bonding pad, and an encapsulant covering the lead frame, the first and second devices and at least a portion of the first and second pluralities of leads. The package may be a TSSOP-8 composite package having a common drain MOSFET pair and an IC.
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