| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion element and a solid-state imaging element with a low dark current and a high photoelectric conversion efficiency, which can be responded at high speed. Ž<P>SOLUTION: There are provided: a pair of electrodes 101, 104; a photoelectric conversion layer 102 arranged between the pair of electrodes 101, 104; and electric charge blocking layers 105, 103 provided between at least one of the pair of electrodes 101, 104 and the photoelectric conversion layer 102, wherein the electric charge blocking layers 105, 103 contain a hydrogenation inorganic oxide. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
