FIELD-EFFECT TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To incorporate a Schottky barrier diode with small forward voltage drop at the time of switching-on in a field effect transistor by a GaN-based compound semiconductor used as a switching element of a matrix converter. SOLUTION: The field effect transistor has a source electrode S, a drain electrode D and a gate electrode G, which are formed on a semiconductor layer 11 by a nitride gallium-based compound material. A Schottky electrode 14 which is Schottky-bonded to an electron supply layer 13 between the gate electrode G and the drain electrode D, and the drain electrode D is formed in the transistor. COPYRIGHT: (C)2010,JPO&INPIT