| 摘要 |
PURPOSE: An oxide semiconductor thin film, an electro magnetic field effect transistor and a manufacturing method thereof are provided to obtain a transparent oxide semiconductor thin film without using metallic element. CONSTITUTION: An oxide semiconductor thin film, an electro magnetic field effect transistor and a manufacturing method thereof include an aluminium contained oxide, a zinc contained oxide, and a contained oxide. The oxide semiconductor thin film is in an amorphous state which is under 400 degrees. The field effect transistor includes a source/drain electrode, a gate insulating layer(30), an active layer(50), and a gate electrode(20) on the substrate.
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