发明名称 |
MASK FOR SILICON CRYSTALLIZATION, METHOD OF FORMING POLY-SILICON THIN FILM, AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR |
摘要 |
A silicon crystallization mask of the present invention includes; a main exposure portion including a plurality of complete light transmission regions which completely transmit light therethrough, and a preliminary exposure portion including a plurality of incomplete light transmission regions, which each partially transmit light therethrough, wherein at least two of the incomplete light transmission regions have different magnitudes of light transmittance from each other.
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申请公布号 |
US2009258465(A1) |
申请公布日期 |
2009.10.15 |
申请号 |
US20090407405 |
申请日期 |
2009.03.19 |
申请人 |
SAMSUNG ELLECTRONIC CO., LTD. |
发明人 |
CHUNG SE-JIN |
分类号 |
H01L21/336;B05C11/00;H01L21/20 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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