| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film semiconductor substrate comprising an epitaxial layer using single crystal silicon or polycrystal silicon, at a low cost with less cracking. <P>SOLUTION: The method of manufacturing a thin film semiconductor substrate includes: a step in which at least either one of hydrogen ion and rare gas ion is implanted in such manner as an ion implantation layer is not formed at least at part in the plane of a semiconductor substrate; a step of forming an epitaxial layer on the surface of such side of the semiconductor substrate as ion is implanted; and a step of separating a thin film, where the epitaxial layer is formed, from the semiconductor substrate. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
