| 摘要 |
<p>PURPOSE: A method of fabricating semiconductor device is provided to prevent a problem including the potential drop, the threshold voltage shift and data retention deterioration. CONSTITUTION: The method of manufacturing the semiconductor device comprises as follows. The semiconductor substrate(102) is provided. The lamination film including the charge trapping layer(106) of the turner insulating layer(104) and insulating material is formed in the semiconductor substrate. A part of the charge trapping layer is exposed by patterning the lamination film on the charge trapping layer. The exposed charge trapping layer is etched by using the first the etching gas. The charge trapping layer is etched by the second etching process on the condition that the fluorine ratio included in the etching gas is lower than the first etching.</p> |
