发明名称 ALUMINUM NITRIDE SUBSTRATE WITH OXIDE LAYER, ALUMINUM NITRIDE SINTERED COMPACT, PROCESSES FOR PRODUCING THE ALUMINUM NITRIDE SUBSTRATE AND THE ALUMINUM NITRIDE SINTERED COMPACT, CIRCUIT BOARD, AND LED MODULE
摘要 <p>Disclosed is an aluminum nitride substrate comprising an aluminum nitride sintered compact and an oxide layer having a high adhesive strength provided on a surface of the aluminum nitride sintered compact. The aluminum nitride substrate comprises an oxide layer (3) and is characterized in that the oxide layer contains aluminum nitride crystal particles (4) and the thickness of a virtual layer formed of only aluminum oxide calculated based on the total content of the aluminum oxide component in the oxide layer is 5 to 100 µm.</p>
申请公布号 WO2009119603(A1) 申请公布日期 2009.10.01
申请号 WO2009JP55850 申请日期 2009.03.24
申请人 PANASONIC ELECTRIC WORKS CO., LTD.;HIRAYAMA, KENTAROU;IMAI, JUNJI;SATO, MASAHIRO 发明人 HIRAYAMA, KENTAROU;IMAI, JUNJI;SATO, MASAHIRO
分类号 C04B35/581;C04B41/80;C04B41/87;H01L23/15;H01L33/64 主分类号 C04B35/581
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