| 摘要 |
<p>PURPOSE: An exposure mask and an exposing method using the same are provided to feedback the data to the exposing device for obtaining the uniformity of the field by processing the data using the exposure mask inserting the specific pattern. CONSTITUTION: An exposure mask(10) includes a plurality of first reticle focus patterns. A plurality of first reticle focus patterns are formed with the same pattern as the cell pattern in the outermost region for changing the focus of the exposing device to correspond to the size difference of the pattern in the center and the outermost region of the field. The exposure mask is formed using the reticle. The DICD of the reticle focus pattern of the exposure mask is measured. The CD difference of the center and the edge is calculated using the DICD measurement value. The wafer exposure process using the exposure mask is performed while changing the depth of a focus using the data corresponding to the CD difference.</p> |
