| 摘要 |
<p>A method of forming a mask pattern is provided to form a micro pattern less than a mask pattern by performing self-align double etch with a nipple formed on the hard mask having different etch rates. In a method of forming a mask pattern, a target film(110), a first hard mask film, and a second hard mask film are successively formed on a semiconductor substrate(100). A first and the second hard mask film are patterned so that the first hard mask layer pattern(120a) and the second hard mask film pattern(130a) have the first width. The second hard mask film pattern is etched, and the space between the second hard mask film pattern and the first hard mask layer pattern is filled up by a third hard mask film.</p> |
