LIGHT EMITTING DEVICE USING COMPOUND SEMICONDUCTOR

摘要

Disclosed is a light emitting device using a compound semiconductor. The light emitting device optimizes strain applied to an active layer to minimize a piezoelectric field and a spontaneous polarization field in the active layer and to maximize light emitting efficiency. The light emitting device using a compound semiconductor includes an upper clad layer, an active layer and a lower clad layer, wherein the upper clad layer includes a first clad layer and a second clad layer; the lower clad layer includes a third clad layer and a fourth clad layer; the second clad layer and the third clad layer are disposed on the top and bottom of the active layer, respectively; the first clad layer and the second clad layer are different from each other in their chemical compositions; and the third clad layer and the fourth clad layer are different from each other in their chemical compositions.