PROGRAMMING METHOD OF THE RESISTIVE MEMORY DEVICE

摘要

A programming method of a resistive memory device is provided to perform a reliable operation of a resistive memory device by stabilizing voltage scattering in a reset programming and a set programming. A pulse having the same size is applied to a resistance conversion layer for a set programming or a reset programming. A size, width, and number of the pulse are set(S10). The pulse is applied to the resistance conversion layer. The number of pulses applied to the resistance conversion layer is compared(S12). In case the number of pulses applied to the resistance conversion layer is N, the operation is finished. In case the number of pulses applied to the resistance conversion layer is not N, the pulse is again applied to the resistance conversion layer.