发明名称 |
CRYSTALLIZATION METHOD OF AMORPHOUS LAYER AND THIN FILM SOLAR CELL AND FABRICATION METHOD OF THE CELL ADOPTING THE CRYSTALLIZATION METHOD |
摘要 |
<p>A crystallization method of an amorphous layer, and a thin film solar cell and fabrication method of the cell adopting the crystallization method are provided to be manufactured simply at a low coast by efficiently crystallizing an amorphous layer. A heat-radiating layer(21) is formed on a substrate(10), wherein the heat-radiating layer is distanced from the substrate through a suspending structure. An amorphous layer(20) is formed on the heat-radiating layer, and the amorphous layer is heated by applying voltage to the heat-radiating layer. The amorphous layer is crystallized by the heat from the heat-radiating layer, and is made of a semiconductor material. The semiconductor material is made of one of Si and Ge.</p> |
申请公布号 |
KR20090095314(A) |
申请公布日期 |
2009.09.09 |
申请号 |
KR20080020584 |
申请日期 |
2008.03.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, YOUNG JUN;CHOI, JUN HEE;NAM, JUNG GYU |
分类号 |
H01L31/042 |
主分类号 |
H01L31/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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