发明名称 CRYSTALLIZATION METHOD OF AMORPHOUS LAYER AND THIN FILM SOLAR CELL AND FABRICATION METHOD OF THE CELL ADOPTING THE CRYSTALLIZATION METHOD
摘要 <p>A crystallization method of an amorphous layer, and a thin film solar cell and fabrication method of the cell adopting the crystallization method are provided to be manufactured simply at a low coast by efficiently crystallizing an amorphous layer. A heat-radiating layer(21) is formed on a substrate(10), wherein the heat-radiating layer is distanced from the substrate through a suspending structure. An amorphous layer(20) is formed on the heat-radiating layer, and the amorphous layer is heated by applying voltage to the heat-radiating layer. The amorphous layer is crystallized by the heat from the heat-radiating layer, and is made of a semiconductor material. The semiconductor material is made of one of Si and Ge.</p>
申请公布号 KR20090095314(A) 申请公布日期 2009.09.09
申请号 KR20080020584 申请日期 2008.03.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, YOUNG JUN;CHOI, JUN HEE;NAM, JUNG GYU
分类号 H01L31/042 主分类号 H01L31/042
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