发明名称 HEAT TREATMENT APPARATUS AND METHOD FOR MANUFACTURING SOI SUBSTRATE USING THE HEAT TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To suppress a warp of a base substrate in heat treatment, and to suppress defective quality caused by local changes in the temperature of the substrate. SOLUTION: The apparatus includes a treatment chamber, a supporting base provided in the treatment chamber, a plurality of supports provided over the supporting base and are arranged to support the base substrate, and a heating unit for heating the base substrate. Each position of the plurality of supports can be changed, by preparing a plurality of fixing parts for loading and unloading the supports to the supporting base, and selectively mounting the plurality of supports to the plurality of fixing parts. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009194374(A) 申请公布日期 2009.08.27
申请号 JP20090005619 申请日期 2009.01.14
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI
分类号 H01L21/26;G02F1/13;G02F1/1362;H01L21/02;H01L21/20;H01L21/265;H01L21/336;H01L27/08;H01L27/12;H01L29/786;H01L51/50;H05B33/02;H05B33/14 主分类号 H01L21/26
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