发明名称 |
METHOD OF MAKING A MULTILAYER SUBSTRATE WITH EMBEDDED METALLIZATION |
摘要 |
<p>A method of making a substrate includes providing an upper insulative layer and a lower insulative layer, wherein the upper insulative layer includes an inlet opening, the lower insulative layer includes a channel, and the inlet opening is in fluid communication with the channel, flowing a non-solidified material through the inlet opening into the channel, and then solidifying the non-solidified material by applying energy to the non-solidified material, thereby forming embedded metallization in the channel. The substrate can be a microfluidic device, an electrical interconnect or other electronic devices.</p> |
申请公布号 |
WO2009105036(A1) |
申请公布日期 |
2009.08.27 |
申请号 |
WO2009SG00050 |
申请日期 |
2009.02.16 |
申请人 |
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH;NG, SUM HUAN;WANG, ZHENFENG |
发明人 |
NG, SUM HUAN;WANG, ZHENFENG |
分类号 |
B81C1/00;H05K3/10;H05K3/46 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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