发明名称 METHOD OF MAKING A MULTILAYER SUBSTRATE WITH EMBEDDED METALLIZATION
摘要 <p>A method of making a substrate includes providing an upper insulative layer and a lower insulative layer, wherein the upper insulative layer includes an inlet opening, the lower insulative layer includes a channel, and the inlet opening is in fluid communication with the channel, flowing a non-solidified material through the inlet opening into the channel, and then solidifying the non-solidified material by applying energy to the non-solidified material, thereby forming embedded metallization in the channel. The substrate can be a microfluidic device, an electrical interconnect or other electronic devices.</p>
申请公布号 WO2009105036(A1) 申请公布日期 2009.08.27
申请号 WO2009SG00050 申请日期 2009.02.16
申请人 AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH;NG, SUM HUAN;WANG, ZHENFENG 发明人 NG, SUM HUAN;WANG, ZHENFENG
分类号 B81C1/00;H05K3/10;H05K3/46 主分类号 B81C1/00
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