Verfahren zur Verringerung der Lackvergiftung während der Strukturierung verspannter stickstoffenthaltender Schichten in einem Halbleiterbauelement

摘要

The method involves forming a stressed layer by two transistors, where the stressed layer has silicon and nitrogen. A silicon layer is formed on the stressed layer. A lacquer mask is formed over the stressed layer to cover the former transistor, where the lacquer mask releases an area of the stressed layer. The released area of the stressed layer is removed by the latter transistor. Another stressed layer is formed, which has silicon nitride.