发明名称 |
C implants for improved SiGe bipolar yield |
摘要 |
A method for improving the SiGe bipolar yield as well as fabricating a SiGe heterojunction bipolar transistor is provided. The inventive method includes ion-implanting carbon, C, into at one of the following regions of the device: the collector region (16), the sub-collector region (14), the extrinsic base regions (29), and the collector-base junction region (27). In a preferred embodiment each of the aforesaid regions include C implants.
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申请公布号 |
EP2091076(A2) |
申请公布日期 |
2009.08.19 |
申请号 |
EP20090162231 |
申请日期 |
2002.06.04 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COOLBAUGH, DOUGLAS D.;SCHONENBERG, KATHRYN |
分类号 |
H01L21/8222;H01L21/331;H01L21/265;H01L27/082;H01L29/10;H01L29/737 |
主分类号 |
H01L21/8222 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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