发明名称 IMAGE SENSOR WITH LOW ELECTRICAL CROSS-TALK
摘要 An array of pixels is formed using a substrate, where each pixel has a substrate having a backside and a frontside that includes metalization layers, a photodiode formed in the substrate, frontside P-wells formed using frontside processing that are adjacent to the photosensitive region, and an N-type region formed in the substrate below the photodiode. The N-type region is formed in a region of the substrate below the photodiode and is formed at least in part in a region of the substrate that is deeper than the depth of the frontside P-wells.
申请公布号 US2009200590(A1) 申请公布日期 2009.08.13
申请号 US20080259143 申请日期 2008.10.27
申请人 OMNIVISION TECHNOLOGIES INC. 发明人 MAO DULI;MANABE SOHEI;VENEZIA VINCENT;TAI HSIN-CHIH;NOZAKI HIDETOSHI;QIAN YIN;RHODES HOWARD E.
分类号 H01L31/113;H01L21/00 主分类号 H01L31/113
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