| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface light emitting semiconductor laser having a DBR of high reflectivity and low thermal resistance. SOLUTION: The surface light emitting semiconductor laser includes: a substrate 10; an n-type DBR 20 provided on the substrate 10 and formed by alternately laminating Al<SB>a</SB>Ga<SB>1-a</SB>As layers 21<SB>1</SB>, 21<SB>2</SB>, ..., 21<SB>h</SB>, and Al<SB>b</SB>Ga<SB>1-b</SB>As layers 22<SB>1</SB>, 22<SB>2</SB>, ..., 22<SB>h</SB>(a<b<1); an n-type clad layer 30 provided on the n-type DBR 20; an active layer 32 provided on the first conductivity type clad layer 30; a p-type clad layer 34 provided on the active layer 32; and a p-type DBR 50 provided so as to clamp the n-type clad layer 30, the active layer 32 and the p-type clad layer 34 with the first conductivity type DBR and formed by alternately laminating Al<SB>a</SB>Ga<SB>1-a</SB>As layers 51<SB>1</SB>, 51<SB>2</SB>, ..., 51<SB>k</SB>, and Al<SB>b</SB>Ga<SB>1-b</SB>As layers 52<SB>1</SB>, 52<SB>2</SB>, ..., 52<SB>k</SB>. COPYRIGHT: (C)2009,JPO&INPIT
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