| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, along with its manufacturing method, in which a semiconductor element itself has hermeticity and the surface of a gate electrode is not required to be covered with a moisture resistant protection film, with the gate capacitance of the semiconductor element reduced and high frequency characteristics and gain being improved. SOLUTION: The semiconductor device includes: a gate electrode 24, source electrode 26, and drain electrode 22 which are placed on a first surface of a substrate 10 and have a plurality of fingers; gate terminal electrodes G1-G4, source terminal electrodes S1-S5, and drain terminal electrode D, where a plurality of fingers are formed in bundle for each of the gate electrode, source electrode, and drain electrode, and an active area placed on an underneath part of the gate electrode, source electrode, and drain electrode, on the substrate between the gate electrode and source electrode, and between the gate electrode and drain electrode. It also includes a sealing layer 30 which is placed on the active area, gate electrode, source electrode, and drain electrode through a cavity part and hermetically seals the active area, gate electrode, source electrode, and drain electrode. COPYRIGHT: (C)2009,JPO&INPIT
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