| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor apparatus including a Schottky barrier diode obtaining high voltage resistance and using a nitride semiconductor. SOLUTION: A semiconductor apparatus includes: an n+ type semiconductor substrate 1; an n- type drift region 2 formed on the upper surface of the n+ type semiconductor substrate 1; an anode electrode 3 formed on the upper surface of the n- type drift region 2 and forming a Schottky junction A with the n- type drift region 2; and a cathode electrode 4 electrically connected to the n+ type semiconductor substrate 1. The semiconductor apparatus also includes trenches 5 selectively formed on the surface of the n- type drift region 2, and the trench 5 is burred by the anode electrode 3. COPYRIGHT: (C)2009,JPO&INPIT |
