发明名称 METHOD OF AFTERTREATMENT OF AMORPHOUS HYDROCARBON FILM AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE BY USING THE AFTERTREATMENT METHOD
摘要 <p>The functional groups in the outermost surface of an amorphous hydrocarbon film are replaced. An amorphous hydrocarbon film (110) is formed over a silicon substrate (Sub) coated with a low-k film (105). The amorphous hydrocarbon film (110) is heated not in a silane gas atmosphere. Immediately after the heating, the amorphous hydrocarbon film (110) is heated in a silane gas atmosphere. After this heating, a film (115) such as a hard mask is formed.</p>
申请公布号 WO2009096251(A1) 申请公布日期 2009.08.06
申请号 WO2009JP50634 申请日期 2009.01.19
申请人 TOKYO ELECTRON LIMITED;ISHIKAWA, HIRAKU 发明人 ISHIKAWA, HIRAKU
分类号 H01L21/768;C23C16/26;H01L21/312;H01L23/522 主分类号 H01L21/768
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