发明名称 |
METHOD OF AFTERTREATMENT OF AMORPHOUS HYDROCARBON FILM AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE BY USING THE AFTERTREATMENT METHOD |
摘要 |
<p>The functional groups in the outermost surface of an amorphous hydrocarbon film are replaced. An amorphous hydrocarbon film (110) is formed over a silicon substrate (Sub) coated with a low-k film (105). The amorphous hydrocarbon film (110) is heated not in a silane gas atmosphere. Immediately after the heating, the amorphous hydrocarbon film (110) is heated in a silane gas atmosphere. After this heating, a film (115) such as a hard mask is formed.</p> |
申请公布号 |
WO2009096251(A1) |
申请公布日期 |
2009.08.06 |
申请号 |
WO2009JP50634 |
申请日期 |
2009.01.19 |
申请人 |
TOKYO ELECTRON LIMITED;ISHIKAWA, HIRAKU |
发明人 |
ISHIKAWA, HIRAKU |
分类号 |
H01L21/768;C23C16/26;H01L21/312;H01L23/522 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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