| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve reliability of a bonded region between a bonding wire and an electrode pad in a high-temperature operation. <P>SOLUTION: This semiconductor device 100 is provided with: a semiconductor chip 102; AlCu pads 107 formed on the semiconductor chip 102, containing Al as a main constituent and further containing Cu; and CuP wires 111 being connection members connecting inner leads 117 arranged in the outside of the semiconductor chip 102 to the semiconductor chip 102, and mainly containing Cu; and is sealed by a sealing resin 115 substantially without containing halogen. A plurality of alloy layers different in composition ratios of Al to Cu are formed in connection regions between the AlCu pads 107 and the CuP wires 111, and each alloy layer includes a CuAl<SB>2</SB>layer, and a layer formed between the CuAl<SB>2</SB>layer and the CuP wire 111, and having a relatively low Al composition ratio relative to the CuAl<SB>2</SB>layer. <P>COPYRIGHT: (C)2009,JPO&INPIT |
