METHOD FOR MANUFACTURING OF VERTICAL TRENCH MOSFET AND ITS STRUCTURE,申请号KR20070088367-传众专利搜索

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发明名称	METHOD FOR MANUFACTURING OF VERTICAL TRENCH MOSFET AND ITS STRUCTURE
摘要
申请公布号	KR100910469(B1)	申请公布日期	2009.08.04
申请号	KR20070088367	申请日期	2007.08.31
申请人		发明人
分类号	H01L21/335;H01L29/78	主分类号	H01L21/335
代理机构		代理人
主权项
地址

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