发明名称 |
INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICAL STRAP |
摘要 |
<p>A method of forming an IC is presented. The method includes providing a substrate having a plurality of transistors formed thereon. The transistors have gate stack, source and drain regions. An electrical strap is formed and in contact with at least a portion of at least one sidewall of the gate stack of a first transistor to provide a continuous electrical flowpath over a gate electrode of the first transistor and the source or drain region of a second transistor. Figure 12</p> |
申请公布号 |
SG153737(A1) |
申请公布日期 |
2009.07.29 |
申请号 |
SG20080086530 |
申请日期 |
2008.11.21 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD |
发明人 |
LIEYONG YANG;BEN CHIAH SIAU;MING LEI;HUA XIAO;XIONGFEI YU;KELVIN GUAN TIANPENG;SAN CHIA PUAY;SHU CHENG CHOR;CHIA GARY;KONG LEONG CHEE;LIAN SEAN;SAN PEY KIN;YONG LI CHAO |
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