发明名称 |
Methods for fabricating flash memory devices |
摘要 |
Methods for fabricating flash memory devices are disclosed. A disclosed method comprises: forming a polysilicon layer on a semiconductor substrate; injecting dopants having stepped implantation energy levels into the polysilicon layer; forming a photoresist pattern on the polysilicon layer; and etching the polysilicon layer to form a floating gate.
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申请公布号 |
US7566616(B2) |
申请公布日期 |
2009.07.28 |
申请号 |
US20040902543 |
申请日期 |
2004.07.29 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
SONG JUNG GYUN |
分类号 |
H01L21/336;H01L21/8247;H01L27/115;H01L29/423 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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