PHASE CHANGE TYPE MEMORY DEVICE AND FABRICATING METHOD THEREOF
摘要
<p>A phase change memory device and a manufacturing method thereof for increasing operation stability and reliability are provided to increase the phase change memory device and distribution character of the set state resistance value. A phase change memory device comprises a phase change material layer(22). The phase change material layer is comprised of the germanium-antimony-tellurium system. The composition of the antimony added to the Ge2Sb2+xTe5 comprising the phase change material layer to the excess of quantity is 0.12~0.32. As to the Ge2Sb2+xTe5 comprising the phase change material layer, the structure of the crystalline state is comprised of the hcp single phase.</p>
申请公布号
KR20090081302(A)
申请公布日期
2009.07.28
申请号
KR20080022402
申请日期
2008.03.11
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人
YOON, SUNG MIN;YU, BYOUNG GON;LEE, SEUNG YUN;PARK, YOUNG SAM;CHOI, KYU JEONG;LEE, NAM YEAL