发明名称 |
Semiconductor device and its manufacturing method |
摘要 |
It is an object of the present invention to provide laser irradiation apparatus and method which can decrease the proportion of the microcrystal region in the whole irradiated region and can irradiate a semiconductor film homogeneously with a laser beam. A low-intensity part of a laser beam emitted from a laser oscillator is blocked by a slit, the laser beam is deflected by a mirror, and the beam is shaped into a desired size by using two convex cylindrical lenses. Then, the laser beam is delivered to the irradiation surface.
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申请公布号 |
US2009173893(A1) |
申请公布日期 |
2009.07.09 |
申请号 |
US20050585128 |
申请日期 |
2005.08.12 |
申请人 |
TANAKA KOICHIRO;ISOBE ATSUO;YAMAMOTO YOSHIAKI |
发明人 |
TANAKA KOICHIRO;ISOBE ATSUO;YAMAMOTO YOSHIAKI |
分类号 |
B23K26/00;H01L21/36;H01L21/428 |
主分类号 |
B23K26/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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