SEMICONDUCTOR DEVICE, SUBSTRATE WITH SINGLE-CRYSTAL SEMICONDUCTOR THIN FILM AND METHODS FOR MANUFACTURING SAME

摘要

A semiconductor device, a substrate with a single-crystal semiconductor thin film, and methods for manufacturing the same which enable an improvement in transistor characteristic in a single-crystal semiconductor element including a single-crystal semiconductor thin film transferred onto an insulating substrate having poor heat resistance. A method for manufacturing a semiconductor device comprising plural single-crystal semiconductor elements including a single-crystal semiconductor thin film on an insulating substrate comprises a first heat treatment step of heat-treating the single-crystal semiconductor thin film which is doped with an impurity, in which at least part of the plural single-crystal semiconductor elements are formed, and which is joined to the insulating substrate at a temperature lower than 650°C and a second heat treatment step of, after the first heat treatment step, heat-treating the single-crystal semiconductor thin film for a period of time shorter than the heat treatment time in the first heat treatment step at a temperature equal to or higher than 650°C.