CLEANING COMPOSITION FOR SEMICONDUCTOR DEVICE AND CLEANING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME

摘要

A cleaning composition for a semiconductor device is provided to ensure excellent removal effect of etch residue, to minimize damages of underlayer, to prevent residues from being left even after performing a rinse process, and to improve productivity of a semiconductor manufacturing process. A cleaning composition for a semiconductor device comprises a fluoride compound 0.5-1.5 weight%, a water-soluble organic solvent 55-75 weight% and water 23.5-44.5 weight% and has pH of more than 8.0 and less than 8.5. A method for cleaning a semiconductor device comprises the steps of: forming a patterning target film on a semiconductor substrate; forming photoresist patterns on the object film to be patterned; etching the object film by using the photoresist pattern as a mask; and cleaning a semiconductor substrate of which the object film is etched, with the cleaning solution composition.