| 摘要 |
<p>A semiconductor device is provided to lower the generation of defect caused by particles between lines and to improve a yield by forming a bit line, a bit line bar, a power line and a ground line on different layers. A semiconductor device comprises a bit line(110), a second insulating layer(132) and a bit bar line(120). The bit line is formed on a first insulating layer. The second insulating layer is formed on the first insulating layer. The bit bar line and the bit line are arranged in turns on the second insulating layer. The semiconductor device is composed of the first insulating layer, a pair of first bit lines and a first bit bar lines arranged on the first insulating layer, the second insulating layer and a pair of second bit lines and second bit bar lines arranged between the first pairs.</p> |
