Heterostructure fabricating method for complementary MOS device in e.g. electronic field, involves depositing silicon layers using vector gas and gaseous derivative of silicon, where vector gas is inert with respect to derivative

摘要

The method involves depositing silicon layers (5, 6) by vapor phase epitaxy technique using a vector gas and a gaseous derivative of silicon to permit the deposition of silicon atoms, where the gaseous derivative of silicon is chosen from a group constituted by a silane, disilane and/or trisilane. Gas that is inert with respect to the derivative, is used as the vector gas, where the inert vector gas is chosen from a group constituted of nitrogen, argon and/or helium.