| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure where stress concentration from outside at a specific point, being applied to a bonding pad of semiconductor device, is relaxed while easiness in manufacturing a semiconductor device is improved. <P>SOLUTION: The direction through which a fourth metal wiring layer positioned on a semiconductor layer extends is so provided as to be orthogonal to the direction of third wiring layers ML30 and 37 positioned on the fourth wiring layer. So, even if bonding pads BP1 and BP2 positioned above are applied with stress from outside, the stress conveyed downward is dispersed across the entire by the third wiring layer and fourth wiring layer stacked to cross each other, thereby relaxing concentration of stress to a specific point, and suppressing degradation in strength of a semiconductor device to the minimum. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
