| 摘要 |
A source gas supply apparatus and a source gas supply method are provided to control correctly and uniformly deposition pressure by supplying constantly source gases to a deposition chamber. A source gas supply apparatus(100) supplies source gases to be used in a thin film deposition process using a chemical vapor deposition method, to a deposition chamber. The source gas supply apparatus includes a source material evaporation unit(110), a first chamber(150a), and a second chamber(150b). The source material evaporation unit heats a source material(120) in order to form a source. In the first chamber, the source gases are deposited on a deposition board(160). The second chamber is used for separating the source gases from the deposition board of the first chamber.
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