Shift register and MOS-type solid-state image sensor

摘要

An object of the present invention is to provide a shift register in which it is prevented from malfunctioning because of a portion between a first transistor and a second transistor being in a high-impedance state. The shift register of the present invention includes capacitor means 5 for storing data outputted from a unit circuit 1 of the preceding block. A first transistor 3 is turned ON only when data is being stored in the capacitor means 5. A second transistor 7 includes a control electrode and an input-side diffusion layer connected to the output-side diffusion layer of the first transistor 3, and is turned ON only when a pulse of a clock signal from the first transistor 3 is inputted to the control electrode and the input-side diffusion layer. Potential controlling means 2 keeps the second transistor 7 OFF at least during a period in which the second transistor 7 is supposed to be OFF.