| 摘要 |
<p>A CPP(Current-Perpendicular-to-the-Plane) structure magnetoresistive device, a manufacturing method thereof, and a memory device are provided to accurately read information by forming a spin valve film in a magnetoresistive random access memory. A bottom layer(54), an antiferromagnetic layer(55), a fixed magnetic layer(56), a nonmagnetic intermediate layer(57), a free magnetic layer(58), and a protective layer(59) are successively overlapped in a spin valve film(49). The spin valve film has a single spin valve structure. The bottom layer is received on a surface of a bottom electrode(46). A top electrode(52) is received on a surface of the protective layer. The fixed magnetic layer is formed by laminating a first fixed magnetic layer(56a), a nonmagnetic bonding layer(56b), and a second fixed magnetic layer(56c). The fixed magnetic layer has a laminate ferrimagnetic structure.</p> |
