摘要 |
<p>The device for wire bonding with a copper containing contact wire (2) for connecting a component (9) with a carrier (7), comprises a guide for the contact wire, an arrangement (3) for melting a part of the contact wire for connecting with bond pads (4), a first plasma nozzle by which the part of the contact wire, the bond pad and/or the bond area is subjected with plasma for connecting with the bond pad, and a second plasma nozzle arranged vertically on the bond pad. The guide is formed so that the melted part of the contact wire is subjected in a bonding area with each of the bond pad. The device for wire bonding with a copper containing contact wire (2) for connecting a component (9) with a carrier (7), comprises a guide for the contact wire, an arrangement (3) for melting a part of the contact wire for connecting with a bond pad (4), a first plasma nozzle by which the part of the contact wire, the bond pad and/or the bond area is subjected with plasma for connecting with the bond pad, and a second plasma nozzle arranged vertically on the bond pad. The guide is formed so that the melted part of the contact wire is subjected in a bonding area with each of the bond pad. The bond pad is arranged both at the component and at the carrier. The plasma nozzle is adjustable in its bias so that a plasma beam exiting from the nozzle reaches to an adjustable area as target. The plasma nozzle is mounted in the area, in which the contact wire leaves the guide. An independent claim is included for a method for wire bonding with copper containing contact wire for connecting a component with carrier.</p> |