发明名称 |
Memory device and method for operating the same |
摘要 |
A memory device and method for operating the same are provided. The example method may be directed to a method of performing a memory operation on a memory device, and may include applying a negative voltage bias to the memory device during a programming operation of the memory device and applying a positive voltage bias to the memory device during an erasing operation of the memory device. The example memory device may include a substrate and a gate structure formed on the substrate, the gate structure exhibiting a faster flat band voltage shift under a negative voltage bias than under a positive voltage bias, the gate structure receiving a negative voltage bias during a programming of the memory device and receiving a positive voltage bias during an erasing operation of the memory device.
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申请公布号 |
US7542346(B2) |
申请公布日期 |
2009.06.02 |
申请号 |
US20070704204 |
申请日期 |
2007.02.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK SANG-JIN;PARK YOUNG-SOO;SHIN SANG-MIN;CHA YOUNG-KWAN |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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