发明名称 |
METHOD OF PASSIVATING CHEMICAL MECHANICAL POLISHING COMPOSITIONS FOR COPPER FILM PLANARIZATION PROCESSES |
摘要 |
A method of passivating a CMP composition by dilution and determining the relationship between the extent of dilution and the static etch rate of copper. Such relationship may be used to control the CMP composition during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface.
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申请公布号 |
US2009137122(A1) |
申请公布日期 |
2009.05.28 |
申请号 |
US20080234199 |
申请日期 |
2008.09.19 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
LIU JUN;KING MACKENZIE;DARSILLO MICHAEL S.;BOGGS KARL E.;ROEDER JEFFREY F.;WRSCHKA PETER;BAUM THOMAS H. |
分类号 |
H01L21/306;C09G1/02;C23F3/00;C23F3/06;C23F11/14;H01L21/321 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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