发明名称 |
TEMPERATURE CONTROL METHOD, METHOD OF OBTAINING TEMPERATURE CORRECTION VALUE, METHOD OF MANUFACTURING SEMICONDUCTOR AND SUBSTRATE TREATMENT APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for effectively using detection temperatures for temperature control when there are detection temperatures whose number exceeds the division number of a heater, in a thermal treatment furnace. SOLUTION: In the temperature control method in which a target temperature is given in a thermal treatment furnace 1 and a plurality of heaters 2 are controlled according to the target temperature, a virtual temperature is calculated on the basis of the detection temperature of a profile temperature sensor 15 provided inside the thermal treatment area 9 of the thermal treatment furnace 1, and the heater 2 is controlled so that the virtual temperature is coincident with the target temperature. COPYRIGHT: (C)2009,JPO&INPIT
|
申请公布号 |
JP2009117798(A) |
申请公布日期 |
2009.05.28 |
申请号 |
JP20080187631 |
申请日期 |
2008.07.18 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
YAMAGUCHI HIDETO |
分类号 |
H01L21/205;C23C16/46;C23C16/52;H01L21/22;H01L21/31;H01L21/324 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|