发明名称 TEMPERATURE CONTROL METHOD, METHOD OF OBTAINING TEMPERATURE CORRECTION VALUE, METHOD OF MANUFACTURING SEMICONDUCTOR AND SUBSTRATE TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a method for effectively using detection temperatures for temperature control when there are detection temperatures whose number exceeds the division number of a heater, in a thermal treatment furnace. SOLUTION: In the temperature control method in which a target temperature is given in a thermal treatment furnace 1 and a plurality of heaters 2 are controlled according to the target temperature, a virtual temperature is calculated on the basis of the detection temperature of a profile temperature sensor 15 provided inside the thermal treatment area 9 of the thermal treatment furnace 1, and the heater 2 is controlled so that the virtual temperature is coincident with the target temperature. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009117798(A) 申请公布日期 2009.05.28
申请号 JP20080187631 申请日期 2008.07.18
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 YAMAGUCHI HIDETO
分类号 H01L21/205;C23C16/46;C23C16/52;H01L21/22;H01L21/31;H01L21/324 主分类号 H01L21/205
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