The present invention relates to a Ill-nitride semiconductor light emitting device, and more particularly, to a Ill-nitride semiconductor light emitting device which can facilitate current spreading and improve electrostatic discharge characteristic by providing an undoped GaN layer with a thickness over 300 A in an n-side contact layer.
申请公布号
WO2009045005(A3)
申请公布日期
2009.05.22
申请号
WO2008KR05395
申请日期
2008.09.11
申请人
EPIVALLEY CO., LTD.;JEON, SOO KUN;PARK, EUN HYUN;LIM, JAE GU