GROUP III NITRIDE SEMICONDUCTOR CRYSTAL GROWING METHOD, GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE FABRICATION METHOD, AND GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE

摘要

A growing method of a group III nitride semiconductor crystal includes the steps of preparing an underlying substrate, and growing a first group III nitride semiconductor crystal doped with silicon by using silicon tetrachloride (SiCl4) gas as doping gas, on the underlying substrate by vapor phase growth. The growth rate of the first group III nitride semiconductor crystal is at least 200 mum/h and not more than 2000 mum/h.