| 摘要 |
An integrated circuit with the cell test function for the electrostatic discharge (ESD) protection, wherein each ESD unit protection circuit has a first, second, and third thin film transistors (TFTs) composed and connected to a signal line, a fourth TFT's and a fifth TFT's gate and drain electrodes are also shorted at the common electrode and the source electrode of the third TFT connects to the common electrode. A sixth TFT's drain electrode connects to the source electrode of the fourth TFT and the source electrode of the fifth TFT connects to the gate electrode of the sixth TFT. By the gate and drain electrodes of the sixth TFT connecting to the corresponding test-switch pads respectively, the sixth TFT is used as a TFT switch so as to build the cell test function in the ESD unit protection circuit.
|
