| 摘要 |
A surface acoustic wave device includes: an IDT electrode formed at a main surface of a piezoelectric substrate, an extraction electrode extracted from the IDT electrode; a surface acoustic wave chip having a metal junction formed along a periphery of the main surface of the piezoelectric substrate; a contact electrode made of an insulating material, connecting to the extraction electrode formed at one main surface thereof; an external electrode formed at the other main surface of the contact electrode; and a cover substrate having a through-hole electrode for connecting the contact electrode to the external electrode. The IDT electrode and the extraction electrode are hermetically sealed in an interior of the space formed by bonding the surface acoustic wave chip to the cover substrate through the metal junction. The interior of the space contains an auxiliary section having enough height to prevent the cover substrate from coming in contact with the IDT electrode even in the case of distortion in the piezoelectric substrate or the cover substrate, the auxiliary section formed at the main surface of the piezoelectric substrate.
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