| 摘要 |
PROBLEM TO BE SOLVED: To enable a semiconductor apparatus to perform high-frequency operation by reducing contact resistance, thereby increasing current density. SOLUTION: Metal regions 11 and 12 and a semiconductor region 13 can be introduced into a desired region of a sheet type carbon structure 10, and hence a source-drain electrode portion 23 can be formed in the metal regions 11 and 12 and a gate electrode portion 22 can be formed in the semiconductor region 13, so that metal-metal junctions are formed, especially, at contact portions for respective electrodes, so that low-resistance electric conduction can be obtained. Consequently, the semiconductor apparatus has fast operation speed and is applicable to a high-frequency circuit, thereby the semiconductor device 20 with improved characteristic and reliability can be obtained. COPYRIGHT: (C)2009,JPO&INPIT
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