发明名称 BROAD RIBBON BEAM ION IMPLANTER ARCHITECTURE WITH HIGH MASS-ENERGY CAPABILITY
摘要 A ribbon ion beam system, comprising an ion source configured to generate a ribbon ion beam along a first beam path, wherein the ribbon ion beam enters a mass analysis magnet having a height dimension (h1) and a long dimension (w1) that is perpendicular to an xy plane, wherein the mass analysis magnet is configured with its momentum dispersive xy plane to receive the ribbon ion beam and to provide magnetic fields to transmit the ribbon ion beam along a second beam path, wherein the ribbon ion beam exiting the mass analysis magnet is divergent in the non-dispersive xz plane and convergent in the xy plane, a mass selection slit for receiving the divergent ribbon ion beam and selecting desired ion species of the ribbon ion beam exiting the mass analysis magnet, an angle correction device configured to receive the divergent ribbon ion beam exiting the mass selection slit into a parallel ribbon ion beam in the horizontal xz plane and a diverging ribbon ion beam in an xy plane along a third beam path, and wherein the parallel ribbon beam has a variable height (h2) and a long dimension, width (w2).
申请公布号 US2009108198(A1) 申请公布日期 2009.04.30
申请号 US20070932117 申请日期 2007.10.31
申请人 SATOH SHU;SIERADZKI MANNY 发明人 SATOH SHU;SIERADZKI MANNY
分类号 H01J49/30 主分类号 H01J49/30
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